i t/ u if u na. 20 stern ave. springfield, new jersey 07081 u.s.a. npn power transistors . complementary to the d41d series d40d series telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 30 - 60 volts 1 amp, 6.25 watts d40d is a power transistor designed for various specific and general purpose applications, such as: output and driver stages of amplifiers operating at frequencies from dc to greater than 1.0 mhz; series, shunt and switching regulators; low and high frequency inverters/converters; and many others. features: ? high free-air power dissipation ? npn complement to d41d pnp ? low collector saturation voltage (0.5v typ. @ 1.0a lc) ? excellent linearity ? fast switching case style to-202 dimensions are in inches and (millimeters) " [0483-cko) type to-hs term. 1 emitter term ! base term. 3 collector tab collector maximum ratings (ta = 25c) (unless otherwise specified) rating collector-emitter voltage collector-emitter voltage emitter base voltage collector current ? continuous peak!1) base current ? continuous total power dissipation @ ta = 25 c @ tc = 25c operating and storage junction temperature range symbol vceo vces vebo lc icm ib pd tj.tstg D40D1, 2 30 45 5 1 1.5 .5 1.67 6.25 -55 to +150 d40d4, 5 45 60 5 \5 .5 1.67 6.25 -55 to +150 d40d7, 8 60 75 5 1 1.5 .5 1.67 6.25 -55 to +150 units volts volts volts a a watts c thermal characteristics thermal resistance, junction to ambient thermal resistance, junction to case maximum lead temperature for soldering purposes: '/?" from case for 5 seconds r0ja rwc tl 75 20 +260 75 20 +260 75 20 +260 c/w c/w c (1) pulse test pulse width = 300ms duty cycle < 2%. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of goine to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
electrical characteristics (tc = 25 c) (unless otherwise specified) characteristic symbol win typ max unit off characteristics*1* collector-emitter sustaining voltage D40D1.2 (lc = 10ma) d40d4, 5 d40d7, 8 collector cutoff current (vce = rated vceo) tc = 25 c (vce =? rated vces) tc = 1 50 c emitter cutoff current (veb = 5v) vceo(sus) 'ces 'ebo 30 45 60 ? ? ? 1.0 ? ? 0.1 0.1 volts pa //a second breakdown i second breakdown with base forward biased fbsoa see figure 4 on characteristics dc current gain D40D1.4, 7 (lc = 100ma, vce = 2v) d40d2, 5, 8 D40D1.4, 7 (ic = 1a,vce = 2v) d40d2 d40d5, 8 collector-emitter saturation voltage (lc = 500ma. ib = 50ma) D40D1 , 2, 4, 5 d40d7, 8 base-emitter saturation voltage (lc = 500ma, ib = 50ma) hfe "fe vce(sat) vbe(sat) 50 120 10 20 10 ? ? ? ? \ ? 150 360 e 0.5 1.0 1.5 ? ~ volts volts dynamic characteristics collector capacitance ~ (vcb = 10v, f = 1m|hz) cbo current-gain ? bandwidth product f (lc = 20ma, vce = 10v) 't ? ? 8 200 ? ? pf mhz switching characteristics resistive load delay time + ( = 1a , - , = 0 1a . +{ rise time storage time _ 3qv ( m ^ ts fall time ______^ lf (1)pi ?do kk3 10 fu ? 10 ? jlse test pw = 300ms duty cycle < 2%. *00 !!"^"^s ?""" ~~ "^~* -^^ "n. s 1 ^"v \e x > n \ -a_ . ? ? ? , ^ ? j -* ~? ? ? ? ? : ^^ ?, ?. ?> [e-eoiaieron cum?mt-?* fig. 1 25 200 50 ? ? ? ns viwc "~~-- b?oolm. \ *^ "^ s > s ' s 5 \ n \ \c- collictm ctmwn^a* fig. 2
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